Published November 1982
| Published
Journal Article
Open
A proposed new method for damping relaxation oscillations in laser diodes
- Creators
- Katz, J.
- Margalit, S.
- Yariv, A.
Abstract
A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.
Additional Information
© 1982 IEEE. Manuscript received August 9, 1982. The research described in this paper was carried out by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration. Portions of this research were also sponsored by the Office of Naval Research and the National Science Foundation.Attached Files
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Additional details
- Eprint ID
- 79625
- Resolver ID
- CaltechAUTHORS:20170731-150614993
- NASA/JPL/Caltech
- Office of Naval Research (ONR)
- NSF
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2017-08-01Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field