Published April 29, 1982
| Published
Journal Article
Open
Single-carrier-type dominated impact ionisation in multilayer structures
- Creators
- Blauvelt, H.
- Margalit, S.
- Yariv, A.
Abstract
A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.
Additional Information
© 1982 The Institution of Electrical Engineers. 23rd March 1982. This research was sponsored by the National Science Foundation and the Office of Naval Research.Attached Files
Published - 04246390.pdf
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04246390.pdf
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Additional details
- Eprint ID
- 79623
- Resolver ID
- CaltechAUTHORS:20170731-150148092
- NSF
- Office of Naval Research (ONR)
- Created
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2017-08-01Created from EPrint's datestamp field
- Updated
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2022-10-04Created from EPrint's last_modified field