Published September 15, 1983
| Published
Journal Article
Open
High-speed Schottky photodiode on semi-insulating GaAs
Abstract
A high-speed GaAs photodiode has been fabricated on a GaAs semi-insulating substrate. The photodiode has an active area of 8 μm × 15 μm and a bandwidth in excess of 9 GHz. This Schottky photodiodes is suitable for monolithic integration with other optoelectronic components.
Additional Information
© 1983 The Institution of Electrical Engineers. 19th July 1983.Attached Files
Published - 04248023.pdf
Files
04248023.pdf
Files
(439.1 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:ccb8b6f62046e986d995423787841f78
|
439.1 kB | Preview Download |
Additional details
- Eprint ID
- 79619
- Resolver ID
- CaltechAUTHORS:20170731-144932154
- Created
-
2017-08-01Created from EPrint's datestamp field
- Updated
-
2022-10-04Created from EPrint's last_modified field