Published June 1987
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Diode-grids for millimeter-wave phase-shifters and frequency doublers
Abstract
Diode-grids have been fabricated on 2-cm square monolithic gallium-arsenide wafers with 1600 Schottky varactor-diodes. A computer-controlled reflectometer that uses a wave-front division interference technique was developed to measure the reflection coefficient of the diode-grids. A 70° phase shift with a 6-dB loss was obtained at 93 GHz when the bias on the diode-grid was changed from -3V to +1V. A second harmonic conversion efficiency of 16% and an output power of 0.5 W was obtained at 66 GHz when the diode-grid was pumped with a pulsed magnetron at 33 GHz.
Additional Information
© 1987 IEEE. This work was supported by the Army Research Office, the U.S. Army Harry Diamond Laboratory, the Jet Propulsion Laboratory, and by TRW under the University of California MICRO program. Wayne Lam acknowledges the support of an AMOCO Foundation Fellowship.Attached Files
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Additional details
- Eprint ID
- 79172
- Resolver ID
- CaltechAUTHORS:20170718-170710700
- Army Research Office (ARO)
- U. S. Army Harry Diamond Laboratory
- JPL
- TRW
- AMOCO Foundation
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2017-07-19Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field