Published December 1987
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High speed modulation and CW operation of AlGaAs/GaAs lasers on Si
Abstract
Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.
Additional Information
© 1987 IEEE. This work is supported by Office of Naval Research, Air Force Office of Scientific Research and the National Science Foundation. One of us, H.M. is also a distinguished visiting scientist at Caltech Jet Propulsion Laboratory and is supported partially by SDIO-IST.Attached Files
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- Eprint ID
- 79166
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- CaltechAUTHORS:20170718-153334822
- Office of Naval Research (ONR)
- Air Force Office of Scientific Research (AFOSR)
- NSF
- Strategic Defense Initiative Organization (SDIO)
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2017-07-18Created from EPrint's datestamp field
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