Published March 1987
| Published
Journal Article
Open
All refractory NbN/MgO/NbN tunnel junctions
- Creators
- LeDuc, H. G.
- Stern, J. A.
- Thakoor, S.
- Khanna, S. K.
Abstract
We report the fabrication of all-refractory superconductor-insulator-superconductor tunnel junctions of the form NbN/MgO/NbN. The MgO insulating barrier was deposited by e-beam evaporation. High quality junctions were fabricated with sum gaps of 5.2 meV, and a small subgap leakage parameter (V_m=30 mV, measured at 3mV). These devices are for eventual use as quasiparticle mixer elements in millimeter/submiltimeter wave heterodyne receivers. Fabrication techniques and current-voltage characteristics are discussed. We also propose a new growth mode for MgO films on NbN.
Additional Information
© 1987 IEEE. Manuscript received September 30, 1986. This work was carried out by the Jet Propulsion Laboratory, California Institute of Technology, and was supported by the National Aeronautics and Space Administration (NASA). We benefited greatly from discussions with Dr. John Lambe, Professor Tom Phillips, and Michael Wengler. Jeff Stern would like to thank NASA for his Graduate Student TraineeshipAttached Files
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Additional details
- Eprint ID
- 79164
- Resolver ID
- CaltechAUTHORS:20170718-151724070
- NASA/JPL/Caltech
- NASA Graduate Student Research Fellowship
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2017-07-18Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field