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Published May 2017 | public
Book Section - Chapter

Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

Abstract

We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.

Additional Information

© 2017 OSA.

Additional details

Created:
August 19, 2023
Modified:
October 26, 2023