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Published July 19, 2006 | Supplemental Material
Journal Article Open

Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires

Abstract

Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).

Additional Information

© 2006 American Chemical Society. Received 4 October 2005. Published online 27 June 2006. Published in print 1 July 2006. We acknowledge the NSF, Grant CHE-0213589, for support of this work (N.S.L.), and DARPA-MARCO (P.Y.). H.H. thanks the Fulbright foundation for his postdoctoral fellowship, and A.H. thanks NSF for an IGERT fellowship.

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Supplemental Material - ja056785w_s.pdf

Supplemental Material - ja056785wsi20060623_125407.pdf

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Created:
August 19, 2023
Modified:
October 25, 2023