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Published December 21, 2006 | public
Journal Article

Interfacial Charge-Transfer Absorption: 3. Application to Semiconductor−Molecule Assemblies

Abstract

Interfacial charge-transfer absorption (IFCTA) provides information concerning the barriers to charge transfer between molecules and the energy levels of a metal/semiconductor and the magnitude of the electronic coupling and could thus provide a powerful tool for understanding interfacial charge-transfer kinetics. Here we utilize a previously published model (J. Phys. Chem. B 2005, 109, 10251) to predict the energetics of IFCTA spectra for semiconductors and compare literature observations to these predictions for n-type semiconductors (largely TiO_2). In contrast to metals, where IFCTA has been only rarely observed, new absorption features due to IFCTA are common for semiconductors such as TiO_2. At issue is whether the electron accepting states in the TiO_2 are localized or delocalized over the conduction band.

Additional Information

© 2006 American Chemical Society. Received: June 23, 2006; In Final Form: August 17, 2006. Publication Date (Web): October 20, 2006. This research was carried out at Brookhaven National Laboratory under Contract No. DE-AC02-98CH10886 with the U. S. Department of Energy, supported by its Division of Chemical Sciences, Office of Basic Energy Sciences, and at the California Institute of Technology by the Arnold and Mabel Beckman Foundation. We thank T. Lian and T. Rajh for making unpublished data available to us.

Additional details

Created:
August 19, 2023
Modified:
October 25, 2023