Patterned cells for phase change memories

Abstract

Phase-change memory (PCM) is an emerging nonvolatile memory technology that promises very high performance. It currently uses discrete cell levels to represent data, controlled by a single amorphous/crystalline domain in a cell. To improve data density, more levels per cell are needed. There exist a number of challenges, including cell programming noise, drifting of cell levels, and the high power requirement for cell programming. In this paper, we present a new cell structure called patterned cell, and explore its data representation schemes. Multiple domains per cell are used, and their connectivity is used to store data. We analyze its storage capacity, and study its error-correction capability and the construction of error-control codes.

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