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Published August 1977 | public
Journal Article

Evaluation of a Cesium Primary Ion Source on an Ion Microprobe Mass Spectrometer

Abstract

A commercially available Cs^+ Ion source has been modified for use as the primary Ion source on an Ion microprobe mass spectrometer. The primary ion current Is stable to ~ 1 % over a 1-h period. Up to 1000 h operation Is achieved on a single charge of cesium. Current densities of 10 mA cm^(-2) or better are achieved In microfocused spot sizes ranging from 8 μm to 30 μm. Secondary negative ion yields of electronegative species under Cs^+ Ion bombardment compare favorably with positive ion yields of electropositive species under O_2^+ Ion bombardment. Sputtering rates of Si and GaAs are 2 and 5 times faster respectively than O_2^+ sputtering rates for these substrates. These high sputtering rates facilitate rapid depth profiling analyses. Detection limits have been determined under sample-limited depth profiling conditions for H, C, O, F, and As in Si, and for S In GaAs.

Additional Information

© 1977 American Chemical Society. RECEIVED for review March 28, 1977. Accepted May 26, 1977. Publication Date: August 1977. Ion implanted samples for this evaluation were kindly provided by D. Wolford, T. Sigmon, J.C. C. Tsai, K. Vaidyanathan, and D. Meyers. We thank R. Blattner for helpful discussion and V. Deline for experimental assistance. This work was supported in part by National Science Foundation Grants DMR-76-01058, CHE-74-05745, and CHE-76-03694, and by General lonex Corporation.

Additional details

Created:
August 19, 2023
Modified:
October 20, 2023