Published January 2013
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Journal Article
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Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency
Abstract
The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155–300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.
Additional Information
© 2013 American Vacuum Society. (Received 1 August 2012; accepted 21 August 2012; published 13 September 2012) The research described in this paper was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. The authors gratefully acknowledge the work of the J.A. Woollam company to provide UV ellipsometry data for the films described here. The authors also gratefully acknowledge the support of the Keck Institute for Space Studies for facilitating helpful discussions between the authors and other attendees of the recent workshop entitled: Next Generation UV Instrument Technologies.Files
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Additional details
- Eprint ID
- 64611
- Resolver ID
- CaltechAUTHORS:20160219-143320122
- NASA/JPL/Caltech
- Keck Institute for Space Studies (KISS)
- Created
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2016-02-22Created from EPrint's datestamp field
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2021-11-10Created from EPrint's last_modified field
- Caltech groups
- Keck Institute for Space Studies