Published November 10, 1986
| Published
Journal Article
Open
Fabrication of small laterally patterned multiple quantum wells
- Creators
-
Scherer, A.
- Craighead, H. G.
Abstract
A technique of high voltage electron beam lithography and BCI_3/Ar reactive ion etching for laterally patterning GaAs/Al_0_3 Ga_(0.7) As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
Additional Information
© 1986 American Institute of Physics. Received 17 July 1986 Accepted 15 September 1986. The authors received part of their support from the Department of the Army, contract number DAAK20-85-C-0395. The help of E. Beebe and L. Schiavone is also gratefully acknowledged. We thank M. Tamargo for the molecular beam epitaxially grown quantum well material.Attached Files
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Additional details
- Eprint ID
- 63966
- Resolver ID
- CaltechAUTHORS:20160126-095219159
- DAAK20-85-C-0395
- Department of the Army
- Created
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2016-01-27Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field