Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published June 2015 | public
Book Section - Chapter

GaP/Si heterojunction solar cells

Abstract

The world record efficiency and open circuit voltage for crystalline silicon solar cells are held by a-Si/Si heterojunction devices. While a-Si provides excellent surface passivation, these heterojunction devices are limited by non-ideal optical and electronic properties. Gallium phosphide is a candidate material for replacing a-Si in a heterojunction device, promising lower parasitic absorption and better carrier mobilities. In this work, we present our results in growing high quality GaP thin films directly on Si using a two-step nucleation and growth scheme with metalorganic chemical vapor deposition, characterization, and x-ray photoelectron spectroscopy band offset measurements toward realizing a GaP/Si heterojunction device.

Additional Information

© 2015 IEEE. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization, and the structural and electrical characterization is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Critical support and equipment were provided by the Kavli Nanoscience Institute. This work benefited from use of the Applied Physics and Materials Science Department's Transmission Electron Microscopy Facility. XPS data were collected at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology.

Additional details

Created:
September 15, 2023
Modified:
October 23, 2023