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Published July 2015 | public
Journal Article

Enhancement of the performance of GaP solar cells by embedded In(N)P quantum dots

Abstract

Improving the utilization of solar spectra of wide bandgap semiconductors that can potentially provide enough free energy is one of the promising strategies for realizing efficient and spontaneous integrated conversion of solar energy to chemical fuels. We demonstrate herein that nitrogen doped InP quantum dots (QDs) embedded in wide bandgap GaP could improve the solar energy conversion performance. Photoelectrochemical experiments in contact with a nonaqueous, reversible redox couple indicated that the QD-embedded devices exhibited improved performance relative to devices without QDs, with short-circuit current densities increasing from 0.16 mA cm^(−2) for GaP-only devices to 0.23 and 0.29 mA cm^(−2) for InP and InNP QD-embedded devices, respectively. Additionally, the open-circuit voltages increased from 0.95 V for GaP-only devices to 1.11 and 1.14 V for InP and InNP QD-embedded devices, respectively, and the external quantum yield of the devices was also enhanced by the embedded QDs. The improvement is attributed to the absorption of sub-bandgap photons by the In(N)P QDs.

Additional Information

© 2015 Elsevier. Received 3 February 2015, Revised 18 May 2015, Accepted 8 June 2015, Available online 17 June 2015.

Additional details

Created:
August 22, 2023
Modified:
October 25, 2023