Published September 1, 2015
| public
Journal Article
Graphene field effect devices operating in differential circuit configuration
Abstract
We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam lithography along with other semiconductor manufacturing processes. These devices were then systematically measured in an automated setup and their DC characteristics analyzed in terms of a simple but effective analytical model. This model together with the collected data allowed us to proceed further with both mathematical analysis of circuit characteristics as well as numerical simulation in a dedicated circuit analysis software.
Additional Information
© 2015 Elsevier B.V. Received 24 October 2014; Received in revised form 6 February 2015; Accepted 9 March 2015; Available online 28 March 2015. We thankfully acknowledge the help of Derrick Chi (Caltech) for EBL and Nick Strandwitz (also Caltech) for ALD. Fabrication was carried out at the Kavli Nanoscience Institute, Caltech. Measurements were performed in the CARPLAT facility at EPFL with kind support of Wladek Grabinsky. This work was financed by SNSF Electron Fluidics: Graphene Y-Branch Differential Logic Project, Grant Number 135046.Additional details
- Eprint ID
- 61508
- Resolver ID
- CaltechAUTHORS:20151023-144026164
- 135046
- Swiss National Science Foundation (SNSF)
- Created
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2015-10-26Created from EPrint's datestamp field
- Updated
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2022-09-15Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute