Electrical conduction through thin amorphous SiC films

Abstract

The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)V^nn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators.

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