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Published May 2015 | public
Book Section - Chapter

An MMIC low-noise amplifier design technique

Abstract

In this paper we propose a parallel two-finger unit transistor MMIC low-noise amplifier design technique which enables the design of wideband and high linearity low-noise amplifiers with very stable, predictable, and repeatable operation. We prove the feasibility of the proposed design technique by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26–33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.

Additional Information

© 2015 IEEE. The authors thank Ms. Mary Soria and Ms. Heather Owen of JPL for assembly expertise. This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. The work of M. Varonen was supported by the Academy of Finland through the Postdoctoral research post and by Alfred Kordel Foundation.

Additional details

Created:
August 20, 2023
Modified:
October 23, 2023