Fermi Level Position at Metal-Semiconductor Interfaces
- Creators
-
Mead, C. A.
- Spitzer, W. G.
Abstract
The position of the Fermi level at a metal-semiconductor interface relative to the conduction band has been found to be a constant fraction of the semiconductor band gap for all but 3 of the 14 group IV or III-V semiconductors studied. In all cases, the position was essentially independent of the metal work function. This general result is not inconsistent with the limited theories of surface state energies now available. The three exceptional cases can be understood in terms of a first-order perturbation to the surface state energies correlated with a similar perturbation observed in the energy gap at the (111) zone edge. Experiments are also reported on Ga(As-P) alloys, and two II-VI materials showing distinctly different behavior.
Additional Information
© 1964 American Physical Society. Received 18 November 1963;revised manuscript received 16 January 1964. Supported by the U.S. Office of Naval Research, the Technical Advisory Committee of the Joint Services Electronic Program, and the International Telephone and Telegraph Company.Attached Files
Published - PhysRev.134.A713.pdf
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Additional details
- Eprint ID
- 54185
- Resolver ID
- CaltechAUTHORS:20150128-111216077
- Office of Naval Research (ONR)
- Joint Services Electronic Program
- International Telephone and Telegraph Company
- Created
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2015-01-28Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field