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Published March 1972 | Updated + Published
Journal Article Open

Current-voltage characteristics of small size MOS transistors

Abstract

One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.

Additional Information

© 1972 IEEE. Manuscript received August 16, 1971.

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Published - 01476899.pdf

Updated - Current-VoltageCharacteristicsofSmallSizeMOSTransistors.pdf

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August 19, 2023
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