Electrical Transport and Contact Properties of Low Resistivity n Type Zinc Sulfide Crystals
- Creators
- Aven, Manuel
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Mead, C. A.
Abstract
This Letter describes some electrical contact and transport properties of ZnS single crystals having room-temperature resistivities in the range of 1 to 10 ohm-cm. Previous electrical transport measurements on ZnS have been done mainly at high temperatures or under photoexcitation. Electrical contacts to ZnS which display ohmic characteristics at room temperature have been described by Alfrey and Cooke. A serious limitation to a more extensive investigation of the electrical properties of ZnS has been the difficulty in providing ZnS crystals with contacts which would stay ohmic at low temperatures. It has also been difficult to dope ZnS n-type without simultaneously introducing large concentrations of native acceptor defects.
Additional Information
© 1965 The American Institute of Physics. Received 10 May 1965. Sponsored, in part, by the A. F. Cambridge Res. Lab. [Contract No. AF-19 (628)-4976] and, in part, by the Office of Naval Research [Contract No. Nonr-220(42)].Attached Files
Published - 1.1754243.pdf
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Additional details
- Eprint ID
- 52917
- Resolver ID
- CaltechAUTHORS:20141216-162020351
- AF-19 (628)-4976
- Air Force Cambridge Research Laboratories
- Nonr-220(42)
- Office of Naval Research (ONR)
- Created
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2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field