Published March 15, 1965
| Published
Journal Article
Open
Surface States on Semiconductor Crystals; Barriers on the Cd(Se:S) System
- Creators
-
Mead, C. A.
Abstract
We report here measurements of surface barrier heights of metal contacts on Cd(Se:S) crystals in which a continuous transition is observed between the CdS case in which the barrier height varies as the metal work function to the CdSe case where the barrier height is essentially independent of the metal. The results have fundamental implications concerning the nature of the surface states and their relationship to the properties of the semiconductor.
Additional Information
© 1965 American Institute of Physics. Received 19 January 1965. The author thanks W. G. Spitzer for many helpful discussions, A. Chodos for making the x-ray fluorescence measurements, D. C. Reynolds for supplying the crystals, H. M. Simpson for the fabrication of the devices, and V. Heine for supplying a preprint of his work. This work was supported in part by the Office of Naval Research and the International Telephone and Telegraph Company.Attached Files
Published - 1.1754185.pdf
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Additional details
- Eprint ID
- 52916
- Resolver ID
- CaltechAUTHORS:20141216-161517797
- Office of Naval Research (ONR)
- International Telephone and Telegraph Company
- Created
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2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field