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Published April 29, 1985 | public
Journal Article

Electronic-excitation mechanism in sputtering induced by high density electronic excitation

Abstract

On the basis of the assumption that two holes are attractive in a dense electron-hole plasma near the surface because of the Anderson negative-U interaction, the yield of laser- and ion-induced sputtering in the electronic excitation regime was calculated as a function of electron-hole concentration in a plasma. It is found that the model gives an order-of-magnitude account of the yields of these two sputtering processes.

Additional Information

© 1985 Elsevier Science Publishers B.V. Received 10 December 1984; revised manuscript received 13 February 1985; accepted for publication 13 February 1985. Available online 10 September 2002. Supported in part by the Grant-in-Aid for Scientific Research of the Ministry of Education, Science and Culture and the National Science Foundation [DMR83-18274] and Schlumberger-Doll Research.

Additional details

Created:
August 19, 2023
Modified:
October 18, 2023