Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation

Abstract

MeV oxygen ion implantation in GaAs/ AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A 10μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AlGaAs.

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