High-temperature hardness of Ga_(1−x)In_xAs

Creators: Guruswamy, S.; Hirth, J. P.; Faber, K. T.

Abstract

Substantial solid‐solution strengthening of GaAs by In acting as InAs_4 units has recently been predicted for an intermediate‐temperature plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. Hardness measurements at high temperatures up to 900 °C have been carried out on (100) GaAs, Ga_(0.9975)In_(0.0025)As, and Ga_(0.99)In_(0.01)As wafers, all of which contain small amounts of boron. Results show a significant strengthening effect in In‐doped GaAs. A nominally temperature‐independent flow‐stress region is observed for all three alloys. The In‐doped GaAs shows a higher plateau stress level with increasing In content. The results are consistent with the solid‐solution strengthening model. The magnitude of the solid‐solution hardening is sufficient to explain the reduction in dislocation density with In addition.

Additional Information

© 1986 American Institute of Physics. (Received 27 May 1986; accepted for publication 15 August 1986). The authors are grateful for the support of this work by the Defense Advanced Research Projects Agency (DOD), DARPA Order No. 5526, monitored by AFOSR under Contract No. F49620-85-C-0129, and for the help of R.N. Thomas and other members of the Devices Group at the Westinghouse R&D Center, for providing materials for this research under their contract with DARPA, No. DARPA-Westinghouse- N-00014-84-C-0632, as well as for contributing helpful discussions.

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