Published September 1989
| public
Journal Article
Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C
- Creators
- Rai, R. S.
- Guruswamy, S.
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Faber, K. T.
- Hirth, J. P.
Abstract
Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been studied by transmission electron microscopy. The results for (Ga, In)As, similar to earlier findings for Si and Ge, provide the basis for a proposed model for recovery processes. The observed structures together with their mechanical properties indicate that the role of In is consistent with an athermal contribution to the frictional stress arising from a solid-solution-hardening effect.
Additional Information
© 1989 Taylor & Francis. [Received 9 June 1988 and accepted 31 October 1988] The authors are grateful for the support of this work by the Defense Advance Research Project Agency (DARPA) (U.S. Department of Defense), Order 5526, monitored by the U.S. Air Force Office of Scientific Research under Contract F49620-85-C-0129, and for the provision of materials for this research by Dr Shaun McGuigan of Materials Growth and Device Technology Group, Westinghouse R&D Center under contract N00014-84-C-0632 with DARPA.Additional details
- Eprint ID
- 49447
- DOI
- 10.1080/01418618908213866
- Resolver ID
- CaltechAUTHORS:20140908-181330183
- 5526
- Defense Advanced Research Projects Agency (DARPA)
- F49620-85-C-0129
- Air Force Office of Scientific Research (AFOSR)
- N00014-84-C-0632
- Defense Advanced Research Projects Agency (DARPA)
- Created
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2014-09-11Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field