Published October 2, 2009
| Published
Journal Article
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Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi_2Te_3 and Sb_2Te_3
Abstract
We show that the strongly spin-orbit coupled materials Bi_2Te_3 and Sb_2Te_3 and their derivatives belong to the Z_2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi_2Te_3 is a large spin-orbit-induced indirect bulk band gap (δ∼150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb_2Te_3 exhibits similar Z_2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.
Additional Information
© 2009 The American Physical Society. Received 18 June 2009. Published 28 September 2009. The use of synchrotron x rays and theoretical computations is supported by DOE/BES (No. DE-FG-02-05ER46200, No. AC03-76SF00098, and No. DE-FG02-07ER46352). Materials growth is supported by NSF (No. DMR-0819860). M. Z. H. acknowledges the A. P. Sloan Foundation.Attached Files
Published - PhysRevLett.103.146401.pdf
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PhysRevLett.103.146401.pdf
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Additional details
- Alternative title
- Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3
- Eprint ID
- 49029
- Resolver ID
- CaltechAUTHORS:20140828-154214025
- DE-FG-02- 05ER46200
- Department of Energy (DOE)
- AC03-76SF00098
- Department of Energy (DOE)
- DE-FG02- 07ER46352
- Department of Energy (DOE)
- DMR-0819860
- NSF
- Alfred P. Sloan Foundation
- Created
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2014-08-29Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field