Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
Abstract
Many IV–VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV–VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.
Additional Information
© 2014 The Royal Society of Chemistry. Received 04 Apr 2014, Accepted 02 May 2014. First published online 02 May 2014. H. W., T. D. and G. J. S. thank the Bosch-BERN and AFOSR-MURI programs for funding.Attached Files
Published - c4ta01643b.pdf
Supplemental Material - c4ta01643b1.pdf
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Additional details
- Eprint ID
- 48639
- Resolver ID
- CaltechAUTHORS:20140818-084929841
- Air Force Office of Scientific Research (AFOSR)
- Created
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2014-08-19Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field