Published October 1, 1989
| Published
Journal Article
Open
Variation of the Metallic Onset with Magnetic Field in Doped Germanium
- Creators
-
Rosenbaum, T. F.
- Field, S. B.
- Bhatt, R. N.
Abstract
We demonstrate substantial magnetic-field tuning of the metal-insulator transition in Ge:Sb for H < 20 kOe. From a fit to the conductivity in a series of samples at millikelvin temperatures in different fields to the critical form σ ~ (n/n_c(H) - 1)^μ, we find that μ ≈ 1 independent of H, but that n_c(H) increases more than 25% by H ~ 20 kOe. Moreover, n_c(H) - n_c(0) α H^(1/2), in agreement with a weak-disorder perturbative scaling approach, but in contrast to recent experimental results in Si:As.
Additional Information
© 1989 Europhysics Letters Association (EPLA). (received 2 May 1989; accepted in final form 21 July 1989) We are grateful to H. FRITZSCH for generously supplying the crystals used in this experiment. RNB and TFR acknowledge the hospitality of the Aspen Center for Physics where part of this work was accomplished. The work at The University of Chicago was supported by the National Science Foundation under Grant No. DMR85-17478.Attached Files
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Additional details
- Eprint ID
- 47027
- Resolver ID
- CaltechAUTHORS:20140707-163039204
- DMR85-17478
- NSF
- Created
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2014-07-08Created from EPrint's datestamp field
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2022-07-12Created from EPrint's last_modified field