Magnetic and transport studies of pure V_2O_3 under pressure
Abstract
We report a systematic study of the resistivity and magnetic susceptibility of pure V_2O_3, the original Mott-Hubbard system at half filling, for pressures 0≤P≤25 kbar and temperatures 0.35≤T≤300 K. We also study (V_(0.99)Ti_(0.01)_2O_3 under pressure in order to elucidate the role of disorder on a metal-insulator transition in the highly correlated limit. Despite the low level of doping, we find that the two systems are very different. We observe a conventional collapsing of the Mott-Hubbard gap only for stoichiometric V_2_O3; the Ti disorder stabilizes the long-range antiferromagnetic order and a magnetic Slater gap. Moreover, we discover different P-T phase diagrams for the two systems, with a decoupling of the charge and spin degrees of freedom at the approach to the T=0, pressure-driven metal-insulator transition in pure V_2O_3.
Additional Information
© 1994 The American Physical Society. Received 29 November 1993. The work at the University of Chicago was supported by the NSF Materials Research Laboratory under Grant No. DMR88-19860. S.A.C. acknowledges support from NSF Grant No. DMR92-04820. The work at Purdue University was supported under MISCON Grant No. DE-FG02-90ER45427.Attached Files
Published - PhysRevB.49.7898.pdf
Files
| Name | Size | Download all |
|---|---|---|
|
md5:c3346a6e8fd0ea702fe1ba4980928380
|
335.2 kB | Preview Download |
Additional details
- Alternative title
- Magnetic and transport studies of pure V2O3 under pressure
- Eprint ID
- 47005
- Resolver ID
- CaltechAUTHORS:20140707-163036581
- DMR 88-19860
- NSF
- DMR 92-04820
- NSF
- DE-FG02-90ER45427
- Department of Energy (DOE)
- Created
-
2014-07-09Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field