Published January 15, 2014
| public
Journal Article
Phase Stability and Defect Physics of a Ternary ZnSnN_2 Semiconductor: First Principles Insights
Abstract
Direct bandgap, earth abundant semiconductors with Eg around 1.5 eV are essential for both photovoltaic and solar to fuel (photocatalytic) energy conversion. Among the conventional semiconductors, such as element Si and Ge, binary III-V (III = B, Al, Ga, In; V = N, P, As, Sb) and II-VI (II = Zn, Cd; VI = O, S, Se, Te), only a limited number of candidates have suitable bandgaps in the range 1.0–2.0 eV. This motivates the search for earth-abundant alternatives to current semiconductors for efficient, high-quality optoelectronic devices, photovoltaics and photocatalytic energy conversion. One methodology for the search is to study ternary and multi-ternary semiconductors with more elements and more flexible optoelectronic properties.
Additional Information
© 2013 WILEY-VCH Verlag. Received: June 14, 2013 Revised: July 24, 2013 Published online: October 8, 2013 This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993. Prineha Narang is supported by the National Science Foundation Graduate Research Fellowship and the Resnick Sustainability Institute.Additional details
- Eprint ID
- 41845
- DOI
- 10.1002/adma.201302727
- Resolver ID
- CaltechAUTHORS:20131009-164328252
- DE-SC0004993
- Department of Energy (DOE)
- Resnick Sustainability Institute
- NSF Graduate Research Fellowship
- Created
-
2013-10-09Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Caltech groups
- Resnick Sustainability Institute, JCAP