Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published May 6, 2013 | Published
Journal Article Open

Coulomb blockade in vertical, bandgap engineered silicon nanopillars

Abstract

Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.

Additional Information

© 2013 American Institute of Physics. Received 5 February 2013; accepted 26 February 2013; published online 6 May 2013. This work was supported by the Advanced Energy Consortium under the BEG10-07 grant and the Boeing Corporation under the CT-BA-GTA-1 grant. The authors would like to credit the TEM image in Fig. 1(c) to A. Homyk. S.W. would like to thank both S. Harmon and T. Nelson-Walavalkar for helpful discussion. P.L. thanks the Samuel P. and Frances Krown SURF fellowship for their support. The authors would like to additionally thank the staff of the Kavli Nanoscience Institute for their continued support.

Attached Files

Published - ApplPhysLett_102_183101.pdf

Files

ApplPhysLett_102_183101.pdf
Files (671.8 kB)
Name Size Download all
md5:a12b38f3191f53d1ba98cdc95ae161b2
671.8 kB Preview Download

Additional details

Created:
August 19, 2023
Modified:
March 5, 2024