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Published December 27, 2012 | Supplemental Material + Published
Journal Article Open

Giant Topological Insulator Gap in Graphene with 5d Adatoms

Abstract

Two-dimensional topological insulators (2D TIs) have been proposed as platforms for many intriguing applications, ranging from spintronics to topological quantum information processing. Realizing this potential will likely be facilitated by the discovery of new, easily manufactured materials in this class. With this goal in mind, we introduce a new framework for engineering a 2D TI by hybridizing graphene with impurity bands arising from heavy adatoms possessing partially filled d shells, in particular, osmium and iridium. First-principles calculations predict that the gaps generated by this means exceed 0.2 eV over a broad range of adatom coverage; moreover, tuning of the Fermi level is not required to enter the TI state. The mechanism at work is expected to be rather general and may open the door to designing new TI phases in many materials.

Additional Information

© 2012 American Physical Society. Received 29 June 2012; published 27 December 2012. The authors gratefully acknowledge A. Damascelli, J. Eisenstein, J. Folk, E. Henriksen, and C. Zeng for helpful discussions, as well as C. Weeks for performing transport calculations related to this study. This work was supported by DOE Grant No. DE-FG02-05ER46237 (J.H. and R.W.), the National Science Foundation through Grant No. DMR-1055522 (J.A.), the Alfred P. Sloan Foundation (J.A.), NSERC (M. F.), and CIfAR (M. F.).

Attached Files

Published - PhysRevLett.109.266801.pdf

Supplemental Material - Graphene_5d_Supplemental_resubmitted.pdf

Supplemental Material - README.TXT

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