Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation
Abstract
Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn_(3)P_2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn_(3)P_2 substrates. Zn_(3)P_2 substrates that were etched with Br_2 in methanol exhibited surface recombination velocity values of 2.8 × 10^4 cm s^(−1), whereas substrates that were further treated by aqueous HF–H_(2)O_2 exhibited surface recombination velocity values of 1.0 × 10^4 cm s^(−1). Zn_(3)P_2 substrates that were etched with Br_2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10^3 cm s^(−1), as well as improved ideality in metal/insulator/semiconductor devices.
Additional Information
© 2012 American Institute of Physics. Received 3 May 2012; accepted 12 October 2012; published online 21 November 2012. This work was supported by the Department of Energy under Grant Nos. DE-FG02-03ER15483 and DE-FG36-08GO18006, by the Beckman Institute Laser Resource Center, and by the Dow Chemical Company. GMK acknowledges support by an NDSEG graduate fellowship and Jeffery W. Lefler is acknowledged for fabrication of a custom time-resolved photoluminescence chamber.Attached Files
Published - JApplPhys_112_106101.pdf
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Additional details
- Eprint ID
- 36211
- Resolver ID
- CaltechAUTHORS:20130107-153109324
- DE-FG02-03ER15483
- Department of Energy (DOE)
- DE-FG36-08GO18006
- Department of Energy (DOE)
- Caltech Beckman Institute
- Dow Chemical Company
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Created
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2013-01-08Created from EPrint's datestamp field
- Updated
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2023-10-20Created from EPrint's last_modified field