Published August 15, 1977
| Published
Journal Article
Open
Double-heterostructure GaAs-GaAIAs injection lasers on semi-insulating substrates using carrier crowding
- Creators
- Lee, C. P.
- Margalit, S.
- Yariv, A.
Abstract
GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10–20 μm) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe‐geometry lasers.
Additional Information
© 1977 American Institute of Physics. Received 25 April 1977; accepted for publication 8 June 1977. Online Publication Date: 26 August 2008. Work supported by the Office of the Naval Research and by the National Science Foundation.Attached Files
Published - LEEapl77b.pdf
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Additional details
- Eprint ID
- 33008
- Resolver ID
- CaltechAUTHORS:20120808-093031240
- Office of Naval Research
- NSF
- Created
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2012-08-08Created from EPrint's datestamp field
- Updated
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2023-10-18Created from EPrint's last_modified field