Published July 1977
| Published
Journal Article
Open
Investigation of the Au-Ge-Ni and Au-Ge-Pt system used for alloyed contacts to GaAs
- Creators
- Wittmer, W.
- Finstad, T.
- Nicolet, M-A.
Abstract
Widely used metallization schemes for alloyed contacts to n‐type GaAs consist of a Au–Ge alloy with a cover layer of Ni or Pt. We have studied the interaction of these elements (Au–Ge and Ni, Au–Ge and Pt) upon heat treatment on an inert substrate. Our results show that Ni and Pt play an active role in contact formation. During heat treatment the Ge diffuses out of the Au into the Ni or Pt layer, respectively, where it forms stable compounds. Due to the fact that Ni and Pt act as a sink for Ge the composition and, as it is shown, the uniformity of the heat‐treated layers depend on the ratio of the amount of evaporated Ge to Ni or to Pt.
Additional Information
© 1977 American Vacuum Society. Received 10 February 1977; accepted 28 March 1977. We are grateful to J. W. Mayer for his many fruitful comments and to R. Gorris and J. Mallory for their technical assistance. The work was supported by the Defense Advanced Research Projects Agency, the Department of Defense, and monitored by Air Force Cambridge Research Laboratories under Contract No. F19628-75-C-0113.Attached Files
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Additional details
- Eprint ID
- 32879
- Resolver ID
- CaltechAUTHORS:20120802-111429967
- Defense Advanced Research Projects Agency (DARPA)
- Department of Defense
- F19628-75-C-0113
- Air Force Cambridge Research Laboratories
- Created
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2012-08-02Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field