Ideal CdTe/HgTe superlattices
- Creators
- Schulman, J. N.
- McGill, T. C.
Abstract
In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgTe constructed parallel to the (001) zincblende plane. The tight‐binding method is used to calculate the electronic properties of this system, in particular, band edge and interface properties. The energy gap as a function of layer thickness is determined. It is found to decrease monotonically with increasing HgTe layer thickness for a fixed ratio of CdTe to HgTe layer thicknesses. The symmetry of the valence band maximum state is found to change at certain HgTe layer thicknesses. This is explained by relating the superlattice states to bulk CdTe and HgTe states. The existence of interface states is investigated for the superlattice with 12 layers of CdTe alternating with 12 of HgTe. Interface states are found near the boundaries of the Brillouin zone, but none are found in the band gap.
Additional Information
© 1979 American Vacuum Society. Received 13 March 1979; accepted 19 April 1979. The authors are grateful to D. L. Smith and J. S. Best for many useful discussions. We would like to acknowledge the support of the Army Research Office under Contract No. DAAG29-77-C-0015.Attached Files
Published - SCHUjvst79.pdf
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Additional details
- Eprint ID
- 32762
- Resolver ID
- CaltechAUTHORS:20120727-094904581
- DAAG29-77-C-0015
- Army Research Office (ARO)
- Created
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2012-07-30Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field