Published July 1980
| Published
Journal Article
Open
Near-Field Emission of Lead-Sulfide-Selenide Homojunction Lasers
- Creators
- Kimble, H. J.
Abstract
Measurements of the near-field intensity distributions of three lead-sulfide-selenide diode lasers operating near 4.8 μm have been made as a function of injection current. Localized emission in the near field exhibits peaked structure of full width from 5 to 10 μm for operation above threshold. From the dependence of the emission profiles on injection current estimates of 25 cm ^(-1) and 0.09 cm/A are made for the distributed loss and gain coefficients for one of the lasers. Optical confinement perpendicular to the p-n junction can be explained in terms of the homojunction properties.
Additional Information
© 1980 IEEE. Manuscript received January 21, 1980. W. Lo of General Motors Research Laboratories provided the lasers used in these experiments and discussions with him have been most helpful. The technical assistance of T. H. Van Steenkiste is gratefully acknowledged.Attached Files
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- Eprint ID
- 32614
- Resolver ID
- CaltechAUTHORS:20120720-122103546
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