Published September 1981
| Published
Journal Article
Open
Surface core excitons in III-V semiconductors
- Creators
- Daw, M. S.
- Smith, D. L.
- McGill, T. C.
Abstract
Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP.
Additional Information
© 1981 American Vacuum Society. Received 18 March 1981; accepted 18 June 1981.Attached Files
Published - DAWjvst81b.pdf
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- 32549
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- CaltechAUTHORS:20120718-104550766
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2012-07-18Created from EPrint's datestamp field
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