Ion implantation and low-temperature epitaxial regrowth of GaAs
Abstract
Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∼400 °C). The implantation‐induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 Å. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 Å) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low‐temperature annealing of GaAs.
Additional Information
© 1981 American Institute of Physics. Received 17 November 1980; accepted for publication 27 February 1981. We would like to thank Professor S. "Fernando" Lau of the University of California, San Diego, for encouragement and helpful advice throughout the course of this work. We also thank Professor Jack Washburn of the University of California, Berkeley, for useful discussions, M. Parks for much secretarial assistance, and D. Tonn for help with the implantations. This work was supported in part by the Advanced Research Project Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. F-49620-77-C-0087. Financial support was also received from the Basic Research Division of the Department of Energy through the Materials and Molecular Research Division of the Lawrence Berkeley Laboratory.Attached Files
Published - GRIjap81b.pdf
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Additional details
- Eprint ID
- 32531
- Resolver ID
- CaltechAUTHORS:20120717-155107148
- F-49620-77-C-0087
- Air Force Office of Scientific Research
- Department of Energy (DOE) Basic Research Division
- Created
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2012-07-18Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field