Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers
Abstract
Broad area graded‐index separate‐confinement heterostructure single quantum well lasers grown by molecular‐beam epitaxy (MBE) with threshold current density as low as 93 A/cm^2 (520 μm long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A cw threshold current of 0.55 mA was obtained for a laser with facet reflectivities of ∼80%, a cavity length of 120 μm, and an active region stripe width of 1 μm. These devices driven directly with logic level signals have switch‐on delays <50 ps without any current prebias. Such lasers permit fully on–off switching while at the same time obviating the need for bias monitoring and feedback control.
Additional Information
© 1988 American Vacuum Society. Received 9 September 1987; accepted 17 November 1987. The Cal tech portion of this work was supported by the National Science Foundation, the Office of Naval Research, and the Air Force Office of Scientific Research. H. M. was partially supported by SDIO-IST through the Jet Propulsion Laboratory. The ORTEL portion was supported by the Defense Advanced Research Projects Agency under the Optical Computing Program and Naval Research Laboratory.Attached Files
Published - DERjvstb88.pdf
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Additional details
- Eprint ID
- 31749
- Resolver ID
- CaltechAUTHORS:20120531-132159509
- NSF
- Office of Naval Research (ONR)
- Air Force Office of Scientific Research (AFOSR)
- JPL SDIO-IST
- Defense Area Research Projects Agency (DARPA)
- Created
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2012-06-01Created from EPrint's datestamp field
- Updated
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2023-10-17Created from EPrint's last_modified field