Published December 15, 1990
| Published
Journal Article
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Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films
Abstract
The oxidation behavior of reactively sputtered amorphous tungsten nitride of composition W_(80)N_(20) was investigated in dry and wet oxidizing ambient in the temperature range of 450 °C–575 °C. A single WO_3 oxide phase is observed. The growth of the oxide follows a parabolic time dependence which is attributed to a process controlled by the diffusivity of the oxidant in the oxide. The oxidation process is thermally activated with an activation energy of 2.5 ± 0.05 eV for dry ambient and 2.35 ± 0.05 eV for wet ambient. The pre‐exponential factor of the reaction constant for dry ambient is 1.1×10^(21) Å^2/min; that for wet ambient is only about 10 times less and is equal to 1.3×10^(20) Å^2/min.
Additional Information
© 1990 American Institute of Physics. Received 9 July 1990; accepted for publication 23 August 1990. This work is supported by the U.S. Army Research Office under Contract DAAL03-89-K-0049. In addition, the first author is deeply indebted to Intel Corporation for a personal fellowship.Attached Files
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Additional details
- Eprint ID
- 31395
- Resolver ID
- CaltechAUTHORS:20120509-153900631
- DAAL03-89-K-0049
- Army Research Office (ARO)
- Intel Corporation
- Created
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2012-05-10Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field