Published September 16, 2011
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Growth and characteristics of type-II InAs/GaSb superlattice-based detectors
Abstract
We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL.
Additional Information
© 2011 SPIE. Online Sep 16, 2011. The authors thank C. J. Hill for helpful discussions, and M. Tidrow, R. Liang, M. Herman and E. Kolawa for encouragement and support. The research described in this publication was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.Attached Files
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Additional details
- Eprint ID
- 31324
- Resolver ID
- CaltechAUTHORS:20120507-092732767
- Created
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2012-05-07Created from EPrint's datestamp field
- Updated
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2022-11-17Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 8154