Published June 1991
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An X-Band MESFET Grid Oscillator with Gate Feedback
Abstract
In this work we present a design for a quasi-optical MESFET power-combining array that utilizes gate feedback. This circuit is different from previous MESFET grids that utilized packaged devices and source feedback to produce an oscillator at 5 GHz. The present configuration allows the drain and source leads to couple directly to the radiated field. Simulations indicate that this configuration can be used to build a high-frequency oscillator, A transmission-line model for the grid is presented and used to design a 25-element grid for operation at 10 GHz. Measurements show that the grid delivers an effective radiated power (ERP) of 2.4 W at 10.9 GHz.
Additional Information
© 1991 IEEE. Meeting Date: 24 Jun 1991-28 Jun 1991; Date of Current Version: 06 August 2002. This research was supported by the Army Research Office and the Northrop Corporation.Attached Files
Published - WEIapsis91.pdf
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Additional details
- Eprint ID
- 30207
- Resolver ID
- CaltechAUTHORS:20120419-134544935
- Army Research Office (ARO)
- Northrop Corporation
- Created
-
2012-04-19Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 4224684