Published February 6, 2012
| Published
Journal Article
Open
Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
- Creators
- Kim, Kyu Sang
-
Suh, Myoung Gyun
- Cho, S. N.
Abstract
The Ni-dot/Ag/Pt layer, where Ni-dot layer is formed of nanometer sized Ni dots, has been used to improve the reflectivity from the surface of p-type GaN in a light emitting diode (LED). Comparing with Ni/Ag/Pt layer, where Ni layer is a thin film, the Ni-dot/Ag/Pt structure shows significantly improved reflectivity with stable contact resistivity. The optical output power and external quantum efficiency of InGaN LEDs with Ni-dot/Ag/Pt structure for p-metal have improved by 28% and 29%, respectively, over the results of Ni/Ag/Pt structure.
Additional Information
© 2012 American Institute of Physics. Received 13 October 2011; accepted 24 January 2012; published online 9 February 2012. This research was supported by Sangji University Research Fund, 2011.Attached Files
Published - Kim2012p17621Appl_Phys_Lett.pdf
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Kim2012p17621Appl_Phys_Lett.pdf
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Additional details
- Eprint ID
- 29937
- Resolver ID
- CaltechAUTHORS:20120402-111121112
- Sangji University Research Fund
- Created
-
2012-04-11Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field