Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published September 1, 1992 | Published
Journal Article Open

Electric‐field dependence of interband transitions in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum wells by room‐temperature electrotransmittance

Abstract

Room‐temperature electrotransmittance has been used in order to investigate the interband excitonic transitions in a 250‐Å‐thick In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single‐quantum‐well system as a function of an externally applied electric field. Parity forbidden transitions, involving conduction‐band states with quantum numbers up to n=5, which become more pronounced at high electric fields were observed. The ground‐state and the forbidden transitions showed a significant red shift due to the quantum confined Stark effect. A comparison with previously reported results on thinner InGaAs/InAlAs quantum wells indicated that the wide‐well sample exhibits the largest shift, as expected from theory. Despite the appreciable Stark shift, the rather large, field‐induced linewidth broadening and the relatively low electric field at which the ground‐state exciton is ionized poses limitations on using this wide‐quantum‐well system for electro‐optic applications.

Additional Information

© 1992 American Institute of Physics. Received 3 January 1992; accepted for publication 13 May 1992. This work was supported by the European Economics Communities program ESPRIT 3086 for Basic Research.

Attached Files

Published - DIMjap92.pdf

Files

DIMjap92.pdf
Files (911.3 kB)
Name Size Download all
md5:cec86e4009f65d1acbb52d3d29050179
911.3 kB Preview Download

Additional details

Created:
August 20, 2023
Modified:
October 24, 2023