Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots
Abstract
The influence of SiO_2 and Si_3N_4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO_2 layers, Si_3N_4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs.
Additional Information
© 2012 IOP Publishing Ltd. Received 2 December 2011, in final form 31 January 2012. Published 24 February 2012. This work was supported by the National Science Council of ROC (NSC 100-2120-M-008-003 and NSC-99-2221-E-008-095-MY3).Additional details
- Eprint ID
- 29842
- DOI
- 10.1088/0022-3727/45/10/105303
- Resolver ID
- CaltechAUTHORS:20120326-102608756
- NSC 100-2120-M-008-003
- National Science Council (Taipei)
- NSC-99-2221-E-008-095-MY3
- National Science Council (Taipei)
- Created
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2012-03-26Created from EPrint's datestamp field
- Updated
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2022-07-12Created from EPrint's last_modified field