Published March 2012
| public
Journal Article
On the Capacity and Programming of Flash Memories
- Creators
- Jiang, Anxiao (Andrew)
- Li, Hao
-
Bruck, Jehoshua
Abstract
Flash memories are currently the most widely used type of nonvolatile memories. A flash memory consists of floating-gate cells as its storage elements, where the charge level stored in a cell is used to represent data. Compared to magnetic recording and optical recording, flash memories have the unique property that the cells are programmed using an iterative procedure that monotonically shifts each cell's charge level upward toward its target value. In this paper, we model the cell as a monotonic storage channel, and explore its capacity and optimal programming. We present two optimal programming algorithms based on a few different noise models and optimization objectives.
Additional Information
© 2012 IEEE. Manuscript received November 15, 2009; revised October 16, 2011; accepted October 18, 2011. Date of current version February 29, 2012. The material in this paper was presented in part at the International Symposium on Information Theory and Its Applications, Auckland, New Zealand, December 2008, and at the IEEE Pacific Rim Conference on Communications, Computers, and Signal Processing, Victoria, BC, Canada, August 2009. This work was supported in part by NSF CAREER Award CCF-0747415 and in part by NSF Grant ECCS-0802107.Additional details
- Eprint ID
- 29835
- Resolver ID
- CaltechAUTHORS:20120326-082904019
- CCF-0747415
- NSF CAREER
- ECCS-0802107
- NSF
- Created
-
2012-04-17Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 12557621