Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications
Abstract
We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.
Additional Information
© 2012 Optical Society of America. Received 19 July 2011; accepted 2 September 2011; posted 18 November 2011 (Doc. ID 151268); published 20 January 2012. The work presented in this paper was performed by the Jet Propulsion Laboratory (JPL), California Institute of Technology, under a contract with NASA. We gratefully acknowledge the generous collaborative effort by e2v Inc. and helpful discussions with Peter Pool, Paul Jorden, and Paul Jerram of e2v.Attached Files
Published - Nikzad2012p17396Appl_Optics.pdf
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Additional details
- Eprint ID
- 29710
- Resolver ID
- CaltechAUTHORS:20120313-152211335
- NASA/JPL/Caltech
- Created
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2012-03-14Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field