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Published June 1996 | Published
Book Section - Chapter Open

Monolithic 40-GHz 670-m W HBT Grid Amplifier

Abstract

A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.

Additional Information

© 1996 IEEE. Manuscript submitted February 22, 1996. This research was supported by the Air Force Material Command/Rome Laboratory, ARPA Contract #F30602-93-C-0188, and the Army Research Office.

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